G-Band Broad Bandwidth Extended Interaction Klystron with Traveling-Wave Output Structure
نویسندگان
چکیده
In this paper, we investigate a large-sized beam tunnel, G-band extended interaction klystron (EIK) with traveling wave output structure for the development of broad bandwidth EIKs. The high-quality factor F was introduced to estimate characteristics cluster cavities, and optimal cavity parameters were obtained based on factor. simulation mode device designed by 3D particle-in-cell (PIC) commercial software. Four cavities staggered distribution frequencies employed expand bunching bandwidth, two modes, 2π−π/10 2π−2π/10, used as operating modes in structure, effectively increasing bandwidth. findings show that maximum power is 170 W, corresponding gain 37.5 dB, 3-dB up 1.25 GHz. three-hole coupling tunnel provides convenience fabrication devices G-band, our study shows potential method realization broadband EIK.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11193153